2N3828 0.1 a, 40 v npn plastic encapsulated transistor elektronische bauelemente 29-dec-2010 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? a c e k f d b g h j rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? general purpose amplifier transistor absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 40 v emitter to base voltage v ebo 3 v collector current - continuous i c 0.1 a collector power dissipation p c 300 mw thermal resistance, junction to ambient r ja 416 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 40 - - v i c = 0.01ma, i e = 0a collector to emitter breakdown voltage v (br)ceo 40 - - v i c = 1ma, i b = 0a emitter to base breakdown voltage v (br)ebo 3 - - v i e = 0.01ma, i c = 0a collector cut-off current i cbo - - 0.1 a v cb = 60v, i e = 0 a collector cut-off current i cex - - 50 na v ce = 30v, v be(off) = 3v emitter cut-off current i ebo - - 0.1 a v eb = 5v, i c =0 ma dc current gain h fe 30 - 200 v ce = 1v, i c = 12ma collector to emitter saturation voltage v ce(sat) - - 0.3 v i c = 50ma, i b = 5ma base to emitter saturation voltage v be(sat) - - 0.95 v i c = 50ma, i b = 5ma transition frequency f t 360 - - mhz v ce = 20v, i c = 10ma, f=100mhz . to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 ? emitte r ? base ? collector
|
